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Advanced Field-Effect Transistors
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Advanced Field-Effect Transistors : Theory and Applications

Book Details

Format Hardback or Cased Book
ISBN-10 1032493801
ISBN-13 9781032493800
Publisher Taylor & Francis Ltd
Imprint CRC Press
Country of Manufacture GB
Country of Publication GB
Publication Date Dec 22nd, 2023
Print length 290 Pages
Weight 656 grams
Dimensions 16.20 x 24.30 x 1.90 cms
Ksh 24,300.00
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The book addresses the fundamental physics behind the operation of various FETs, as well as challenges and solutions with the FETs for the device to circuit level design and simulation. This book will provide an overview of new semiconductor devices and their applicability in electronic circuit design.

Advanced Field-Effect Transistors: Theory and Applications offers a fresh perspective on the design and analysis of advanced field-effect transistor (FET) devices and their applications. The text emphasizes both fundamental and new paradigms that are essential for upcoming advancement in the field of transistors beyond complementary metal–oxide–semiconductors (CMOS). This book uses lucid, intuitive language to gradually increase the comprehension of readers about the key concepts of FETs, including their theory and applications.

In order to improve readers’ learning opportunities, Advanced Field-Effect Transistors: Theory and Applications presents a wide range of crucial topics:

  • Design and challenges in tunneling FETs
  • Various modeling approaches for FETs
  • Study of organic thin-film transistors
  • Biosensing applications of FETs
  • Implementation of memory and logic gates with FETs

The advent of low-power semiconductor devices and related implications for upcoming technology nodes provide valuable insight into low-power devices and their applicability in wireless, biosensing, and circuit aspects. As a result, researchers are constantly looking for new semiconductor devices to meet consumer demand. This book gives more details about all aspects of the low-power technology, including ongoing and prospective circumstances with fundamentals of FET devices as well as sophisticated low-power applications.


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