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Breakdown Phenomena In Semiconductors And Semiconductor Devices
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Breakdown Phenomena In Semiconductors And Semiconductor Devices

Book Details

Format Hardback or Cased Book
ISBN-10 9812563954
ISBN-13 9789812563958
Publisher World Scientific Publishing Co Pte Ltd
Imprint World Scientific Publishing Co Pte Ltd
Country of Manufacture SG
Country of Publication GB
Publication Date Sep 8th, 2005
Print length 224 Pages
Weight 614 grams
Dimensions 24.90 x 17.10 x 2.20 cms
Ksh 22,150.00
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Aims to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices, and to analyze their features from a unified point of view. This book focuses on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.
Impact ionization, avalanche and breakdown phenomena form the basis of many very interesting and important semiconductor devices, such as avalanche photodiodes, avalanche transistors, suppressors, sharpening diodes (diodes with delayed breakdown), as well as IMPATT and TRAPATT diodes. In order to provide maximal speed and power, many semiconductor devices must operate under or very close to breakdown conditions. Consequently, an acquaintance with breakdown phenomena is essential for scientists or engineers dealing with semiconductor devices.The aim of this book is to summarize the main experimental results on avalanche and breakdown phenomena in semiconductors and semiconductor devices and to analyze their features from a unified point of view. Attention is focused on the phenomenology of avalanche multiplication and the various kinds of breakdown phenomena and their qualitative analysis.

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