CMOS Gate-Stack Scaling Materials, Interfaces and Reliability Implications
Book Details
Format
Paperback / Softback
Book Series
MRS Proceedings
ISBN-10
1107408326
ISBN-13
9781107408326
Publisher
Cambridge University Press
Imprint
Cambridge University Press
Country of Manufacture
GB
Country of Publication
GB
Publication Date
Jun 5th, 2014
Print length
194 Pages
Weight
27 grams
Dimensions
22.90 x 15.20 x 1.00 cms
Product Classification:
Materials scienceReliability engineering
Ksh 4,850.00
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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
To address the increasing demands of device scaling, new materials are being introduced into conventional Si CMOS processing at an unprecedented rate. Presentations collected here focus on understanding, from a chemistry and materials perspective, the mechanism of interface formation and defects at interfaces, for both conventional Si and alternative channel (Ge or III-V) systems. Several papers address reliability concerns for high-k/metal gate (basic physical models, charge trapping, etc.), while others cover characterization of the thin films and interfaces which comprise the gate stack. Topics include: advanced Si-based gate stacks; and alternate channel materials.
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