Deep Centers in Semiconductors
Book Details
Format
Hardback or Cased Book
ISBN-10
2881245625
ISBN-13
9782881245626
Publisher
Gordon & Breach Science Publishers SA
Imprint
Gordon & Breach Science Publishers SA
Country of Manufacture
GB
Country of Publication
GB
Publication Date
Nov 30th, 1992
Print length
944 Pages
Weight
1,442 grams
Ksh 81,000.00
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Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap.
Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors.
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