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Dopants and Defects in Semiconductors
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Dopants and Defects in Semiconductors

Book Details

Format Hardback or Cased Book
ISBN-10 113803519X
ISBN-13 9781138035195
Publisher Taylor & Francis Ltd
Imprint CRC Press
Country of Manufacture GB
Country of Publication GB
Publication Date Feb 28th, 2018
Print length 372 Pages
Weight 822 grams
Dimensions 18.40 x 26.00 x 2.60 cms
Ksh 36,000.00
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This revised edition continues to provide the most complete coverage of the fundamental knowledge of semiconductors. In addition to inclusion of new chapter problems and worked examples, it delves into solid-state lighting (LEDs and laser diodes), and offers a solid foundation for experimental methods and the theory of defects in semiconductors.

Praise for the First Edition

"The book goes beyond the usual textbook in that it provides more specific examples of real-world defect physics … an easy reading, broad introductory overview of the field"
Materials Today

"… well written, with clear, lucid explanations …"
―Chemistry World

This revised edition provides the most complete, up-to-date coverage of the fundamental knowledge of semiconductors, including a new chapter that expands on the latest technology and applications of semiconductors. In addition to inclusion of additional chapter problems and worked examples, it provides more detail on solid-state lighting (LEDs and laser diodes). The authors have achieved a unified overview of dopants and defects, offering a solid foundation for experimental methods and the theory of defects in semiconductors.

Matthew D. McCluskey is a professor in the Department of Physics and Astronomy and Materials Science Program at Washington State University (WSU), Pullman, Washington. He received a Physics Ph.D. from the University of California (UC), Berkeley.

Eugene E. Haller is a professor emeritus at the University of California, Berkeley, and a member of the National Academy of Engineering. He received a Ph.D. in Solid State and Applied Physics from the University of Basel, Switzerland.


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