Doping Engineering for Front-End Processing
Book Details
Format
Paperback / Softback
Book Series
MRS Proceedings
ISBN-10
1107408547
ISBN-13
9781107408548
Publisher
Cambridge University Press
Imprint
Cambridge University Press
Country of Manufacture
GB
Country of Publication
GB
Publication Date
Jun 5th, 2014
Print length
336 Pages
Weight
492 grams
Dimensions
15.20 x 22.90 x 2.00 cms
Product Classification:
Materials scienceElectronic devices and materialsSemi-conductors & super-conductors
Ksh 5,200.00
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The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
Materials scientists, silicon technologists and TCAD researchers come together in this book to share experimental results and physical models, discuss achievements and challenges, and identify key issues for future research in this field. The volume focuses on many aspects related to doping of semiconductors (Si, SiGe and Ge) for device fabrication, and explores areas for single-gate as well as multi-gate devices with planar and vertical architectures. Surface properties, coverage, bonding saturation and passivation, and annealing ambient are also discussed.
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