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Energy-Efficient Smart Temperature Sensors in CMOS Technology
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Energy-Efficient Smart Temperature Sensors in CMOS Technology

Softcover reprint of the original 1st ed. 2018

Book Details

Format Paperback / Softback
ISBN-10 3319872869
ISBN-13 9783319872865
Edition Softcover reprint of the original 1st ed. 2018
Publisher Springer International Publishing AG
Imprint Springer International Publishing AG
Country of Manufacture GB
Country of Publication GB
Publication Date Aug 18th, 2018
Print length 118 Pages
Ksh 14,400.00
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This book describes the design and implementation of energy-efficient smart (digital output) temperature sensors in CMOS technology. It is shown that DTMOSTs are capable of achieving low inaccuracy (±0.4°C over the military temperature range) as well as sub-1V operation, making them well suited for use in modern CMOS processes.
This book describes the design and implementation of energy-efficient smart (digital output) temperature sensors in CMOS technology. To accomplish this, a new readout topology, namely the zoom-ADC, is presented. It combines a coarse SAR-ADC with a fine Sigma-Delta (SD) ADC. The digital result obtained from the coarse ADC is used to set the reference levels of the SD-ADC, thereby zooming its full-scale range into a small region around the input signal. This technique considerably reduces the SD-ADC’s full-scale range, and notably relaxes the number of clock cycles needed for a given resolution, as well as the DC-gain and swing of the loop-filter. Both conversion time and power-efficiency can be improved, which results in a substantial improvement in energy-efficiency. Two BJT-based sensor prototypes based on 1st-order and 2nd-order zoom-ADCs are presented. They both achieve inaccuracies of less than ±0.2°C over the military temperature range (-55°C to 125°C). A prototype capable of sensing temperatures up to 200°C is also presented. As an alternative to BJTs, sensors based on dynamic threshold MOSTs (DTMOSTs) are also presented. It is shown that DTMOSTs are capable of achieving low inaccuracy (±0.4°C over the military temperature range) as well as sub-1V operation, making them well suited for use in modern CMOS processes.

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