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Heteroepitaxy of Semiconductors : Theory, Growth, and Characterization, Second Edition

By: (Author) Johanna Raphael , (Author) John E. Ayers , (Author) Paul Rago , (Author) Tedi Kujofsa

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Ksh 51,300.00

Format: Hardback or Cased Book

ISBN-10: 1482254352

ISBN-13: 9781482254358

Edition Number: 2

Publisher: Taylor & Francis Inc

Imprint: CRC Press Inc

Country of Manufacture: GB

Country of Publication: GB

Publication Date: Oct 18th, 2016

Print length: 643 Pages

Weight: 1,392 grams

Dimensions (height x width x thickness): 18.40 x 26.00 x 4.20 cms

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This book serves as a comprehensive reference and graduate-level text on Semiconductor Heteroepitaxy β€”the crystal growth of semiconductor layers on dissimilar substrates for the purpose of making modern semiconductor devices including high-speed transistors, lasers and detectors, digital circuits, photovoltaic cells, solid-state lighting, and sensors. Semiconductor Heteroepitaxy has become increasingly important as an enabling technology for computing, communication, energy, lighting, and control systems. The first edition remains the top book in the field because of its comprehensive treatment and focus on principles. This newest edition includes two entirely new chapters on metamorphic buffers and devices.

In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.


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