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High-Speed Devices and Circuits with THz Applications
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High-Speed Devices and Circuits with THz Applications

Book Details

Format Hardback or Cased Book
ISBN-10 1466590114
ISBN-13 9781466590113
Publisher Taylor & Francis Inc
Imprint CRC Press Inc
Country of Manufacture US
Country of Publication GB
Publication Date Jul 22nd, 2014
Print length 262 Pages
Weight 526 grams
Dimensions 23.70 x 16.10 x 1.90 cms
Ksh 39,600.00
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This book covers the latest high-speed data rate connectivity technologies, discusses THz sensing and imaging devices based on nano devices and materials, describes SOI multigate nanowire FETs, and explains the theory underpinning nanoscale nanowire MOSFETs, simulation methods, and their results. It explores the physics of the SiGe heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications. It also details aspects of THz IC design using Si CMOS devices, including experimental setups for measurements, detection methods, and more.

Presenting the cutting-edge results of new device developments and circuit implementations, High-Speed Devices and Circuits with THz Applications covers the recent advancements of nano devices for terahertz (THz) applications and the latest high-speed data rate connectivity technologies from system design to integrated circuit (IC) design, providing relevant standard activities and technical specifications. Featuring the contributions of leading experts from industry and academia, this pivotal work:

  • Discusses THz sensing and imaging devices based on nano devices and materials
  • Describes silicon on insulator (SOI) multigate nanowire field-effect transistors (FETs)
  • Explains the theory underpinning nanoscale nanowire metal-oxide-semiconductor field-effect transistors (MOSFETs), simulation methods, and their results
  • Explores the physics of the silicon-germanium (SiGe) heterojunction bipolar transistor (HBT), as well as commercially available SiGe HBT devices and their applications
  • Details aspects of THz IC design using standard silicon (Si) complementary metal-oxide-semiconductor (CMOS) devices, including experimental setups for measurements, detection methods, and more

An essential text for the future of high-frequency engineering, High-Speed Devices and Circuits with THz Applications offers valuable insight into emerging technologies and product possibilities that are attractive in terms of mass production and compatibility with current manufacturing facilities.


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