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III–V Compound Semiconductors
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III–V Compound Semiconductors : Integration with Silicon-Based Microelectronics

Book Details

Format Paperback / Softback
ISBN-10 0367383268
ISBN-13 9780367383268
Publisher Taylor & Francis Ltd
Imprint CRC Press
Country of Manufacture GB
Country of Publication GB
Publication Date Sep 23rd, 2019
Print length 603 Pages
Weight 453 grams
Product Classification: Semi-conductors & super-conductors
Ksh 12,600.00
Werezi Extended Catalogue 0 in stock

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A discussion of recent advances, this book covers the scientific and technological exploration of the applications, properties, and processes of GaN, GaAs, and other III-V compound semiconductor devices within Si-based technology. It includes a broad range of topics, from fundamental material properties and materials integration to demonstration and industrial devices. The book also contains discussions of materials and devices, including their basic physical and chemical properties, their mechanisms, how to measure their properties, and how to fabricate them.

Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more powerful, cost-effective processors.





III-V Compound Semiconductors: Integration with Silicon-Based Microelectronics covers recent progress in this area, addressing the two major revolutions occurring in the semiconductor industry: integration of compound semiconductors into Si microelectronics, and their fabrication on large-area Si substrates. The authors present a scientific and technological exploration of GaN, GaAs, and III-V compound semiconductor devices within Si microelectronics, building a fundamental foundation to help readers deal with relevant design and application issues.





Explores silicon-based CMOS applications developed within the cutting-edge DARPA program





Providing an overview of systems, devices, and their component materials, this book:







  • Describes structure, phase diagrams, and physical and chemical properties of III-V and Si materials, as well as integration challenges






  • Focuses on the key merits of GaN, including its importance in commercializing a new class of power diodes and transistors






  • Analyzes more traditional III-V materials, discussing their merits and drawbacks for device integration with Si microelectronics






  • Elucidates properties of III-V semiconductors and describes approaches to evaluate and characterize their attributes






  • Introduces novel technologies for the measurement and evaluation of material quality and device properties






  • Investi

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