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Introduction to RF Power Amplifier Design and Simulation
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Introduction to RF Power Amplifier Design and Simulation

Book Details

Format Paperback / Softback
ISBN-10 0367738007
ISBN-13 9780367738006
Publisher Taylor & Francis Ltd
Imprint CRC Press
Country of Manufacture GB
Country of Publication GB
Publication Date Dec 18th, 2020
Print length 449 Pages
Weight 840 grams
Ksh 11,350.00
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This book provides step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Demonstrating the use of computer-aided design (CAD) tools, the text explores active device modeling techniques for transistors, parasitic extraction methods for active devi

Introduction to RF Power Amplifier Design and Simulation fills a gap in the existing literature by providing step-by-step guidance for the design of radio frequency (RF) power amplifiers, from analytical formulation to simulation, implementation, and measurement. Featuring numerous illustrations and examples of real-world engineering applications, this book:





  • Gives an overview of intermodulation and elaborates on the difference between linear and nonlinear amplifiers


  • Describes the high-frequency model and transient characteristics of metal–oxide–semiconductor field-effect transistors


  • Details active device modeling techniques for transistors and parasitic extraction methods for active devices


  • Explores network and scattering parameters, resonators, matching networks, and tools such as the Smith chart


  • Covers power-sensing devices including four-port directional couplers and new types of reflectometers


  • Presents RF filter designs for power amplifiers as well as application examples of special filter types


  • Demonstrates the use of computer-aided design (CAD) tools, implementing systematic design techniques


Blending theory with practice, Introduction to RF Power Amplifier Design and Simulation supplies engineers, researchers, and RF/microwave engineering students with a valuable resource for the creation of efficient, better-performing, low-profile, high-power RF amplifiers.


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