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Light-Induced Defects in Semiconductors
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Light-Induced Defects in Semiconductors

Book Details

Format Hardback or Cased Book
ISBN-10 9814411485
ISBN-13 9789814411486
Publisher Pan Stanford Publishing Pte Ltd
Imprint Pan Stanford Publishing Pte Ltd
Country of Manufacture US
Country of Publication GB
Publication Date Sep 13th, 2014
Print length 212 Pages
Weight 428 grams
Dimensions 23.60 x 15.70 x 1.70 cms
Ksh 20,700.00
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This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.

This book covers electronic and structural properties of light-induced defects, light-induced defect creation processes, and related phenomena in crystalline, amorphous, and microcrystalline semiconductors. It provides a theoretical treatment of recombination-enhanced defect reaction in crystalline semiconductors, particularly GaAs and related materials. It also discusses experimental evidence for this phenomenon. Light-induced defect creation in hydrogenated amorphous silicon (a-Si:H) is described in more detail, including its mechanism and experimental results. The subjects treated by the book are important issues from the viewpoints of physics and applications.


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