Metal Oxide Semiconductor Physics and Technology
Book Details
Format
Paperback / Softback
ISBN-10
047143079X
ISBN-13
9780471430797
Publisher
John Wiley & Sons Inc
Imprint
Wiley-Interscience
Country of Manufacture
US
Country of Publication
GB
Publication Date
Dec 13th, 2002
Print length
928 Pages
Weight
1,338 grams
Dimensions
23.80 x 41.40 x 5.70 cms
Ksh 28,800.00
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This reference explores MOS (Metal Oxide Semiconductors) which are the ceramic semiconductors that are responsible for today's electronic revolution. These materials' ability to hold an electric charge allowed the transistor to replace the vacuum tube and paved the way for the miniaturization of electronic goods.
Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.
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