Metallic Spintronic Devices

This state-of-the-art work addresses both mainstream and emerging metallic spintronic devices. Featuring contributions from well-known academic and industrial experts, the book examines the latest metallic spintronic device research, developments, and applications, from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. The text aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.

• Describes spintronic applications in current and future magnetic recording devices
• Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
• Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
• Investigates spintronic device write and read optimization in light of spintronic memristive effects
• Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
• Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic

aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.