Metallic Spintronic Devices
Book Details
Format
Hardback or Cased Book
Book Series
Devices, Circuits, and Systems
ISBN-10
1466588446
ISBN-13
9781466588448
Publisher
Taylor & Francis Inc
Imprint
CRC Press Inc
Country of Manufacture
US
Country of Publication
GB
Publication Date
Aug 4th, 2014
Print length
274 Pages
Weight
548 grams
Dimensions
23.70 x 16.00 x 1.90 cms
Product Classification:
NanotechnologyElectrical engineeringCircuits & componentsElectronics: circuits and components
Ksh 42,300.00
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Metallic Spintronic Devices provides a balanced view of the present state of the art of metallic spintronic devices, addressing both mainstream and emerging applications from magnetic tunneling junction sensors and spin torque oscillators to spin torque memory and logic. Featuring contributions from well-known and respected industrial and academic experts, this cutting-edge work not only presents the latest research and developments but also:
- Describes spintronic applications in current and future magnetic recording devices
- Discusses spin-transfer torque magnetoresistive random-access memory (STT-MRAM) device architectures and modeling
- Explores prospects of STT-MRAM scaling, such as detailed multilevel cell structure analysis
- Investigates spintronic device write and read optimization in light of spintronic memristive effects
- Considers spintronic research directions based on yttrium iron garnet thin films, including spin pumping, magnetic proximity, spin hall, and spin Seebeck effects
- Proposes unique solutions for low-power spintronic device applications where memory is closely integrated with logic
Metallic Spintronic Devices
aims to equip anyone who is serious about metallic spintronic devices with up-to-date design, modeling, and processing knowledge. It can be used either by an expert in the field or a graduate student in course curriculum.
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