Modern Semiconductor Quantum Physics
by
Ming Fu Li
Book Details
Format
Paperback / Softback
ISBN-10
9810248938
ISBN-13
9789810248932
Publisher
World Scientific Publishing Co Pte Ltd
Imprint
World Scientific Publishing Co Pte Ltd
Country of Manufacture
SG
Country of Publication
GB
Publication Date
Feb 1st, 1995
Print length
588 Pages
Weight
824 grams
Dimensions
16.10 x 33.10 x 3.40 cms
Product Classification:
Semi-conductors & super-conductors
Ksh 12,250.00
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Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties: absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method,Green's function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance; electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination; negative U center, DX center and EL2 Defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions, quantum wells; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum dots.This book can be used as an advanced textbook on semiconductor physics for graduate students in physics and electrical engineering departments. It is also useful as a research reference for solid state scientists and semiconductor device engineers.
Modern Semiconductor Quantum Physics has the following constituents: (1) energy band theory: pseudopotential method (empirical and ab initio); density functional theory; quasi-particles; LCAO method; k.p method; spin-orbit splitting; effect mass and Luttinger parameters; strain effects and deformation potentials; temperature effects. (2) Optical properties: absorption and exciton effect; modulation spectroscopy; photo luminescence and photo luminescence excitation; Raman scattering and polaritons; photoionization. (3) Defects and Impurities: effective mass theory and shallow impurity states; deep state cluster method, super cell method,Green''s function method; carrier recombination kinetics; trapping transient measurements; electron spin resonance; electron lattice interaction and lattice relaxation effects; multi-phonon nonradiative recombination; negative U center, DX center and EL2 Defects. (4) Semiconductor surfaces: two dimensional periodicity and surface reconstruction; surface electronic states; photo-electron spectroscopy; LEED, STM and other experimental methods. (5) Low-dimensional structures: Heterojunctions, quantum wells; superlattices, quantum-confined Stark effect and Wannier-Stark ladder effects; resonant tunneling, quantum Hall effect, quantum wires and quantum dots.This book can be used as an advanced textbook on semiconductor physics for graduate students in physics and electrical engineering departments. It is also useful as a research reference for solid state scientists and semiconductor device engineers.
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