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Multi-Gigahertz Nyquist Analog-to-Digital Converters
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Multi-Gigahertz Nyquist Analog-to-Digital Converters : Architecture and Circuit Innovations in Deep-Scaled CMOS and FinFET Technologies

2023 ed.

Book Details

Format Hardback or Cased Book
ISBN-10 3031227085
ISBN-13 9783031227080
Edition 2023 ed.
Publisher Springer International Publishing AG
Imprint Springer International Publishing AG
Country of Manufacture GB
Country of Publication GB
Publication Date Jan 13th, 2023
Print length 269 Pages
Ksh 18,000.00
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This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter’ building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy – speed – power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy – speed – power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies. The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies. Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;Describes novel methods and techniques to push the accuracy – speed – power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits’ trade-offs across the entire ADC chain;Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.

This book proposes innovative circuit, architecture, and system solutions in deep-scaled CMOS and FinFET technologies, which address the challenges in maximizing the accuracy*speed/power of multi-GHz sample rate and bandwidth Analog-to-Digital Converters (ADC)s. A new holistic approach is introduced that first identifies the major error sources of a converter'' building blocks, and quantitatively analyzes their impact on the overall performance, establishing the fundamental circuit-imposed accuracy - speed - power limits. The analysis extends to the architecture level, by introducing a mathematical framework to estimate and compare the accuracy - speed - power limits of several ADC architectures and variants. To gain system-level insight, time-interleaving is covered in detail, and a framework is also introduced to compare key metrics of interleaver architectures quantitatively. The impact of technology is also considered by adding process effects from several deep-scaled CMOS technologies.

The validity of the introduced analytical approach and the feasibility of the proposed concepts are demonstrated by four silicon prototype Integrated Circuits (IC)s, realized in ultra-deep-scaled CMOS and FinFET technologies.

  • Introduces a new, holistic approach for the analysis and design of high-performance ADCs in deep-scaled CMOS technologies, from theoretical concepts to silicon bring-up and verification;
  • Describes novel methods and techniques to push the accuracy - speed - power boundaries of multi-GHz ADCs, analyzing core and peripheral circuits'' trade-offs across the entire ADC chain;
  • Supports the introduced analysis and design concepts by four state-of-the-art silicon prototype ICs, implemented in 28nm bulk CMOS and 16nm FinFET technologies;
  • Provides a useful reference and a valuable tool for beginners as well as experienced ADC design engineers.


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