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Nanoscale Semiconductor Memories
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Nanoscale Semiconductor Memories : Technology and Applications

Book Details

Format Hardback or Cased Book
ISBN-10 1466560606
ISBN-13 9781466560604
Publisher Taylor & Francis Inc
Imprint CRC Press Inc
Country of Manufacture GB
Country of Publication GB
Publication Date Dec 12th, 2013
Print length 448 Pages
Weight 784 grams
Dimensions 16.00 x 24.20 x 2.90 cms
Ksh 39,600.00
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The book has two-fold intentions. Firstly it assembles the latest research in the field of nanoscale memories technology in one place. And secondly, it exposes the reader to myriad applications that nanoscale memories technology has enabled. The book is meant for advanced graduate research work or for academicians and researchers. This way the book has a widespread appeal, including practicing engineers, academicians, research scientists, and senior graduate students. Nanoscale memories today have a widespread application range.

Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled.

The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory.

Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation.

The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.


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