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Nitride Wide Bandgap Semiconductor Material and Electronic Devices

By: (Author) Jin Cheng Zhang , (Author) Jin Feng Zhang , (Author) Yue Hao

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Ksh 31,500.00

Format: Hardback or Cased Book

ISBN-10: 1498745121

ISBN-13: 9781498745123

Publisher: Taylor & Francis Inc

Imprint: CRC Press Inc

Country of Manufacture: GB

Country of Publication: GB

Publication Date: Oct 3rd, 2016

Print length: 392 Pages

Weight: 894 grams

Dimensions (height x width x thickness): 18.40 x 26.20 x 2.20 cms

Product Classification: Semi-conductors & super-conductors

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This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs).

This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.


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