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Nonvolatile Memory Design
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Nonvolatile Memory Design : Magnetic, Resistive, and Phase Change

Book Details

Format Hardback or Cased Book
ISBN-10 1439807450
ISBN-13 9781439807453
Publisher Taylor & Francis Inc
Imprint CRC Press Inc
Country of Manufacture US
Country of Publication GB
Publication Date Dec 19th, 2011
Print length 208 Pages
Weight 488 grams
Dimensions 24.20 x 16.60 x 1.80 cms
Product Classification: Electronic devices & materials
Ksh 49,500.00
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The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.

The manufacture of flash memory, which is the dominant nonvolatile memory technology, is facing severe technical barriers. So much so, that some emerging technologies have been proposed as alternatives to flash memory in the nano-regime. Nonvolatile Memory Design: Magnetic, Resistive, and Phase Changing introduces three promising candidates: phase-change memory, magnetic random access memory, and resistive random access memory. The text illustrates the fundamental storage mechanism of these technologies and examines their differences from flash memory techniques. Based on the latest advances, the authors discuss key design methodologies as well as the various functions and capabilities of the three nonvolatile memory technologies.


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