Radiation Defect Engineering
Book Details
Format
Hardback or Cased Book
Book Series
Selected Topics in Electronics and Systems
ISBN-10
9812565213
ISBN-13
9789812565211
Publisher
World Scientific Publishing Co Pte Ltd
Imprint
World Scientific Publishing Co Pte Ltd
Country of Manufacture
SG
Country of Publication
GB
Publication Date
Nov 21st, 2005
Print length
264 Pages
Weight
706 grams
Dimensions
25.40 x 16.70 x 2.20 cms
Product Classification:
Semi-conductors & super-conductors
Ksh 17,650.00
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Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.
The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.
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