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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices
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SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices

Book Details

Format Hardback or Cased Book
ISBN-10 1420066854
ISBN-13 9781420066852
Publisher Taylor & Francis Inc
Imprint CRC Press Inc
Country of Manufacture US
Country of Publication GB
Publication Date Dec 13th, 2007
Print length 262 Pages
Weight 650 grams
Ksh 30,600.00
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Focuses on the materials science aspects of silicon heterostructure. This book defines the various advances in the Si-SiGe strained-layer epitaxy for device applications. It covers modern SiGe epitaxial growth techniques, EPI defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe and Si-C alloys.
What seems routine today was not always so. The field of Si-based heterostructures rests solidly on the shoulders of materials scientists and crystal growers, those purveyors of the semiconductor “black arts” associated with the deposition of pristine films of nanoscale dimensionality onto enormous Si wafers with near infinite precision. We can now grow near-defect free, nanoscale films of Si and SiGe strained-layer epitaxy compatible with conventional high-volume silicon integrated circuit manufacturing. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the materials side of the story and details the many advances in the Si-SiGe strained-layer epitaxy for device applications.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume defines and details the many advances in the Si/SiGe strained-layer epitaxy for device applications. Mining the talents of an international panel of experts, the book covers modern SiGe epitaxial growth techniques, epi defects and dopant diffusion in thin films, stability constraints, and electronic properties of SiGe, strained Si, and Si-C alloys. It includes appendices on topics such as the properties of Si and Ge, the generalized Moll-Ross relations, integral charge-control relations, and sample SiGe HBT compact model parameters.


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