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Silicon-Based Photonics
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Silicon-Based Photonics

Book Details

Format Hardback or Cased Book
ISBN-10 9814303240
ISBN-13 9789814303248
Publisher Pan Stanford Publishing Pte Ltd
Imprint Pan Stanford Publishing Pte Ltd
Country of Manufacture SG
Country of Publication GB
Publication Date Nov 19th, 2020
Print length 340 Pages
Weight 810 grams
Product Classification: Nanotechnology
Ksh 17,100.00
Werezi Extended Catalogue 0 in stock

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This book covers the basics of band structure of silicon and germanium and their influence on photonic properties and discusses system layout and key device components with the application background in mind.

Silicon photonics has evolved rapidly as a research topic with enormous application potential. The high refractive index contrast of silicon-on-insulator (SOI) shows great promise for submicron waveguide structures suited for integration on the chip scale in the near-infrared region. Ge- and GeSn-Si heterostructures with different elastic strain levels already provide expansion of the spectral range, high-speed operation, efficient modulation and switching of optical signals, and enhanced light emission and lasing.

This book focuses on the integration of heterostructure devices with silicon photonics. The authors have attempted to merge a concise treatment of classical silicon photonics with a description of principles, prospects, challenges, and technical solution paths of adding silicon-based heterostructures. The book discusses the basics of heterostructure-based silicon photonics, system layouts, and key device components, keeping in mind the application background. Special focus is placed on SOI-based waveguide configurations and Ge- and GeSn-Si heterostructure devices for light detection, modulation, and light emission and lasing. The book also provides an overview of the technological and materials science challenges connected with integration on silicon. The first half of the book is mainly for readers who are interested in the topic because of its increasing importance in different fields, while the latter half covers different device structures for light emission, detection, modulation, extension of the wavelength beyond 1.6 μm, and lasing, as well as future challenges.


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