Silicon Carbide 2008 - Materials, Processing and Devices
Book Details
Format
Hardback or Cased Book
Book Series
MRS Proceedings
ISBN-10
1605110396
ISBN-13
9781605110394
Publisher
Materials Research Society
Imprint
Materials Research Society
Country of Manufacture
GB
Country of Publication
GB
Publication Date
Jul 31st, 2008
Print length
298 Pages
Weight
518 grams
Dimensions
23.40 x 15.70 x 2.00 cms
Product Classification:
Materials science
Ksh 16,000.00
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Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices.
Silicon carbide (SiC) is a robust semiconductor material being actively developed for high-power and high-temperature applications, especially in the field of power electronics and sensors for harsh environments. This book, the fifth in a continuing series, focuses on SiC growth, defects, and devices. New developments in the growth of bulk SiC single-crystal materials, advances in the epitaxial growth of SiC, and progress in the characterization of materials properties and defects in SiC are featured. The volume also highlights the development of devices manufactured on this wide-bandgap semiconductor including: innovative device designs; characterization of device and materials properties; and improvements in wide-bandgap processing technology.
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