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Silicon Heterostructure Devices

By: USA) Cressler Atlanta John D. (Georgia Institute of Technology (Author)

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Ksh 24,000.00

Format: Hardback or Cased Book

ISBN-13: 9781420066906

Publisher: Taylor & Francis Inc

Publication Date: Dec 13th, 2007

Dimension: 25.40 x 17.80 x 92.90 cms

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Highlights silicon-based heterostructure devices and divides them into four sections: SiGe heterojunction bipolar transistors (HBTs), heterostructure FETs, other heterostructure devices, and optoelectronic components. This book covers topics including device physics, broadband noise, performance limits, reliability, and engineered substrates.

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