Strain-Induced Effects in Advanced MOSFETs
Softcover reprint of the original 1st ed. 2011
Book Details
Format
Paperback / Softback
Book Series
Computational Microelectronics
ISBN-10
3709119332
ISBN-13
9783709119334
Edition
Softcover reprint of the original 1st ed. 2011
Publisher
Springer Verlag GmbH
Imprint
Springer Verlag GmbH
Country of Manufacture
AT
Country of Publication
GB
Publication Date
Aug 23rd, 2016
Print length
252 Pages
Product Classification:
Electronics engineering
Ksh 23,400.00
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Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.
Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. The subband structure in stressed semiconductor films is investigated in devices using analytical k.p and numerical pseudopotential methods. A rigorous overview of transport modeling in strained devices is given.
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