Vertical GaN and SiC Power Devices

An introduction to vertical gallium nitride and silicon carbide power devices for engineers working in the field of crystal growth, processing, and design. The book uses commercial examples from recent years and includes topics that have not yet been covered by other textbooks, such as metal/semiconductor junctions and junction terminations.

This is an introduction to vertical gallium nitride (GaN) and silicon carbide (SiC) power devices for students and professionals working in the field of crystal growth, processing, and design. The book uses commercial examples from recent years and includes topics that have not yet been covered by other textbooks on the subject, such as metal/semiconductor junctions, junction terminations, and reliability of vertical GaN and SiC power devices. As GaN can reabsorb recombination radiation (i.e. photon recycling) and SiC cannot, the book emphasises the effects photon recycling. Photon recycling in GaN is attributable to very large peripheral current flowing through non-self-aligned mesa-type p-n junctions. Up till now, this phenomenon has been treated one-dimensionally. The book also offers in-depth coverage of bulk crystal growth of GaN, including hydride vapor-phase epitaxial (HVPE) growth, high-pressure nitrogen solution growth, sodium-flux growth, ammonothermal growth, and sublimation growth of SiC.